All products adopt silicon-free virgin ETFE cast film for Transfer Molding Film-Assisted Molding (FAM/AFT Process) and wafer molding separation. Core pain points resolved: silicone contamination, high-temperature deformation, adhesive residue, cracking of ultra-thin chips, and vehicle-grade reliability failures.
Classified by packaging category, including process, customer pain points and application effects; directly applicable to business promotion and solution documents.
Package Forms: SixPack IGBT Modules, SiC Half-Bridge Modules, DBC Substrate Epoxy Molding Process: Transfer Molding with Epoxy Molding Compound (EMC), molding temperature 170–180°C Original Pain Points PTFE films are prone to cracking and shedding debris; silicone-coated PET films cause silicone migration and contaminate chips and silver sinter layers, leading to electric leakage and poor voltage resistance during PCT autoclave tests, failing to meet AEC-Q101 automotive standards.
Solution: 25–50 μm Matte ETFE Release Film On-Site Application Effects No silicone precipitation; all high-low temperature cycling and high-pressure autoclave reliability tests passed. Superior toughness vs. PTFE, less film breakage during continuous production, 60% reduction in machine downtime for film replacement. Smooth packaging surfaces with drastically reduced flash and burrs; mold cleaning cycle extended from 800 shots to 3,500 shots. End Applications: On-board inverters, 800V high-voltage platform electric drive modules.
Package Forms: QFN48, DFN3×3, Ultra-Thin QFN (0.4mm thin package body) Pain Points: High demolding stress for ultra-thin packages; conventional films easily induce package warpage and corner cracking; silicone contamination on gold wire solder joints triggers electromigration failures.
Solution: Low Peel Force Modified ETFE Film Effects Defect rate of thin package corner cracking dropped from 3.2% to 0.3%; no organic contamination on gold wire zones, passing 1,000-hour temperature cycling tests.
Process: Reconstructed wafer molding, EMC encapsulation of chip arrays Pain Points: Ultra-thin reconstructed wafers (<100 μm); high thermal shrinkage of conventional films causes wafer warpage and misalignment of RDL wiring; adhesive residue leads to micro-bump short circuits.
Solution: 15–38 μm Ultra-Thin High-Purity ETFE Release Film Mass Production Data 70% reduction in wafer warpage; RDL alignment deviation narrowed from 8 μm to 2 μm; elimination of micro-bump contamination and short circuits, applied to 7nm/14nm radio frequency and baseband chips.
Package Form: Multi-Chip SiP Integration (MCU + Memory + Sensors) Process: Large-area integrated EMC molding Pain Points: Packages house multiple bare dies and passive components; trace volatile substances cause interface failures of components.
Effects ETFE features ultra-low outgassing; module failure rate under temperature cycling cut from 12 units per thousand pieces to 0.3 units per thousand pieces, complying with Automotive Grade 0 standards.
Application Scenarios: FC-BGA molding protection for server ASICs and AI accelerator chips, thermal compression separation for underfill Requirements: High cleanliness and dimensional stability; no contamination to micro-bumps and underfill adhesives. Leading domestic OSATs are gradually replacing imported Japanese fluoropolymer films with ETFE films.
Pain Points: Extremely brittle 50 μm ultra-thin silicon wafers prone to cracking under excessive demolding stress; foreign contaminants from conventional release films trigger misjudgments in CP testing.
Solution: Flexible ETFE Film with Controllable Peel Force Improvement Outcomes Wafer cracking rate reduced from 2.8% to 0.08%; packaging yield boosted from 75% to 92%; a key domestically substitutable material for memory OSATs.
Process: Optical epoxy compression molding, integrated lens forming Core Conflict: Optical epoxy prohibits impurity contamination; residual silicone generates haze on lens surfaces and reduces light transmittance.
Solution: High-Light-Transmittance Optical-Grade ETFE Release Film Advantages Silicone-free virgin material; no lens haze post demolding, eliminating extra polishing procedures; widely adopted for camera modules and automotive perception chips.
Process: COB Chip-on-Board Epoxy Compression Molding Pain Points: Silicone migration from silicone-coated films contaminates quantum dot phosphor glue, resulting in color shift and light decay.
Solution: 12–25 μm ETFE Release Film Effects Backlight module yield lifted from 90% to 99.2%, light decay issues fully resolved; mass deployment at multiple leading domestic LED manufacturers.
Standard SOP and general consumer electronics traditionally adopt silicone-coated PET films. Nevertheless, industrial-grade and long-lifespan industrial control chips (for inverters, servo drive ICs) are gradually switching to ETFE films, which feature zero long-term outgassing to prevent internal package corrosion.
